Semiconductor device and method of manufacturing semiconductor device

ABSTRACT

A semiconductor device includes a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap wider than a band gap of the first nitride semiconductor layer, a trench penetrating through the second nitride semiconductor layer and reaching an inside of the first nitride semiconductor layer, a gate electrode placed in the trench over a gate insulating film, and a first electrode and a second electrode formed over the second nitride semiconductor layer on both sides of the gate electrode, respectively.

The present application is a Continuation Application of U.S. patentapplication Ser. No. 15/385,507, filed on Dec. 20, 2016, which is aDivisional Application of U.S. patent application Ser. No. 14/271,277,filed on May 6, 2014, now U.S. Pat. No. 9,559,183 B2, issued on Jan. 31,2017, which is based on and claims priority from Japanese PatentApplication No. 2013-116659 filed on Jun. 3, 2013, the entire contentsof which are incorporated herein by reference.

BACKGROUND

The present invention relates to a semiconductor device and a method ofmanufacturing a semiconductor device, which can be preferably used for,for example, a semiconductor device using a nitride semiconductor and amethod of manufacturing the device.

In recent years, semiconductor devices using a group III-V compoundhaving a band gap greater than that of Si have attracted attentions.Among them, semiconductor devices using gallium nitride (GaN) having thefollowing advantages is under development: 1) having a great dielectricbreakdown field, 2) having a great electron saturation velocity, 3)having a great thermal conductivity, 4) capable of forming a good heterojunction between AlGaN and GaN, and 5) they are non-toxic and highlysafe materials.

Further, semiconductor devices which are power MISFETs (metal insulatorsemiconductor field effect transistors) using gallium nitride andcapable of a normally-off operation are under development from thestandpoint of its high breakdown voltage and fast switchingcharacteristics.

For example, the following Non-patent Document 1 discloses a MISFETusing a hetero junction between AlGaN and GaN and having a structure inwhich a gate recess is made on the back side relative to the heterojunction in order to achieve a normally-off operation.

The following Non-patent Document 2 discloses a MISFET fabricated by,when making a gate recess on the back side relative to a heterojunction, using an insulating film having a patterned opening as a maskand leaving the insulating film in the device.

The following Non-patent Document 3 includes a description on an effectof reducing the surface potential of AlGaN when a nitride film is usedas a surface protective film of an AlGaN/GaN hetero-junction type epi.It discloses, for example, that the surface potential reducing effect ismarkedly large when the nitride film is formed using Cat-CVD (catalyticchemical vapor deposition.

The following Non-patent Document 4 includes a description on, whenvarious protective films formed by ECR sputtering are used as a surfaceprotective film of an AlGaN/GaN hetero-junction type epi, a surfacepotential barrier height and an interfacial sheet charge density at theinterface between the surface protective film and AlGaN.

The following Patent Document 1 discloses a heterojunction field effecttransistor which is not a transistor with a gate recess but has a fieldplate layer whose thickness shows a stepwise change.

The following Patent Documents 2 and 3 disclose a semiconductor devicewhich is not a transistor with a gate recess but has a first field plateelectrode integrated with a gate electrode and a second field plateelectrode integrated with a source electrode.

Patent Documents

[Patent document 1] Japanese Patent No. 4888115

[Patent Document 2] Japanese Patent No. 4417677

[Patent Document 3] U.S. Pat. No. 7,075,125

Non-Patent Documents

[Non-patent Document 1] N. Ikeda et al., “Over 1.7 kV normally-off GaNhybrid MOS-HFETs with a lower on-resistance on a Si substrate”, IE3International Symposium on Power Semiconductor Devices and ICs (ISPSD),pp. 284-287, 2011.

[Non-patent Document 2] K. Ota et al., “A Normally-off GaN FET with HighThreshold Voltage Uniformity Using A Novel Piezo NeutralizationTechnique”, International Electron Device Meeting (IEDM) 2009,IEDM09-154, 2009.

[Nan-patent Document 3] N. Onojima, et al., “Reduction in potentialbarrier height of AlGaN/GaN heterostructures by SiN passivation”, J.Appl. Phys. 101, 043703 (2007).

[Non-patent Document 4] N. Maeda et al., “Systematic Study of DepositionEffect (Si₃N₄, SiO₂, AlN, and Al₂O₃) on Electrical Properties in AlGaNGaN Heterostructures”, Jpn. J. Appl. Phys., Vol. 46, No. 2 (2007), pp.547-554

SUMMARY

The present inventors are engaged in research and development ofsemiconductor devices using a nitride semiconductor as described aboveand have carried out an extensive investigation with a view to improvingthe characteristics of normally-off semiconductor devices. During theinvestigation, they have found that there is a room for furtherimprovement in the characteristics of a semiconductor device using anitride semiconductor.

The other problems and novel features will be apparent from thedescription herein and accompanying drawings.

Of the embodiments disclosed herein, typical ones will next be outlinedbriefly.

A semiconductor device according to one embodiment disclosed herein hasa gate electrode placed in a trench via a gate insulating film. Thisgate insulating film is configured to have a first portion extendingfrom an end portion of the trench to the side of a first electrode andlocated on the side of the end portion of the trench and a secondportion located on the side of the first electrode relative to the firstportion and having a film thickness greater than that of the firstportion.

A method of manufacturing a semiconductor device according to oneembodiment disclosed herein has the steps of: etching a stacked body ofa first nitride semiconductor layer and a second nitride semiconductorlayer with a first film as a mask to form a trench penetrating throughthe second nitride semiconductor layer and reaching the inside of thefirst nitride semiconductor layer. After an end portion of the firstfilm is caused to retreat from an end portion of the trench, a secondfilm is formed on the first film including that inside the trench.

The semiconductor device disclosed herein and shown below in a typicalembodiment is able to have improved characteristics.

In addition, according to the method of manufacturing a semiconductordevice disclosed herein and shown below in a typical embodiment, asemiconductor device having good characteristics can be manufactured.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing the configuration of asemiconductor device of First Embodiment;

FIG. 2 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment;

FIG. 3 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 2;

FIG. 4 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 3;

FIG. 5 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 4;

FIG. 6 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 5;

FIG. 7 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 6;

FIG. 8 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 7;

FIG. 9 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 8;

FIG. 10 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 9;

FIG. 11 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 10;

FIG. 12 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 11;

FIG. 13 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 12;

FIG. 14 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 13;

FIG. 15 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 14;

FIG. 16 is a cross-sectional view showing a manufacturing step of thesemiconductor device of First Embodiment following the step shown inFIG. 15;

FIG. 17 is a cross-sectional view schematically showing theconfiguration of a semiconductor device of Comparative Example;

FIG. 18 is a cross-sectional view schematically showing theconfiguration of the semiconductor device of First Embodiment in thevicinity of a gate electrode thereof;

FIG. 19 is a cross-sectional view schematically showing theconfiguration of Modification Example 1 of the semiconductor device ofFirst Embodiment;

FIG. 20 is a cross-sectional view schematically showing theconfiguration of Modification Example 2 of the semiconductor device ofFirst Embodiment;

FIG. 21 is a cross-sectional view schematically showing theconfiguration of a semiconductor device of Second Embodiment;

FIG. 22 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Second Embodiment;

FIG. 23 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Second Embodiment following the step shown inFIG. 22;

FIG. 24 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Second Embodiment following the step shown inFIG. 23;

FIG. 25 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Second Embodiment following the step shown inFIG. 24;

FIG. 26 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Second Embodiment following the step shown inFIG. 25;

FIG. 27 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Second Embodiment following the step shown inFIG. 26;

FIG. 28 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Second Embodiment following the step shown inFIG. 27;

FIG. 29 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Second Embodiment following the step shown inFIG. 28;

FIG. 30 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Second Embodiment following the step shown inFIG. 29;

FIG. 31 is a cross-sectional view showing an alternative manufacturingstep of the semiconductor device of Second Embodiment;

FIG. 32 is a cross-sectional view showing the alternative manufacturingstep of the semiconductor device of Second Embodiment following thatshown in FIG. 31;

FIG. 33 is a graph showing the relationship of the semiconductor devicebetween on resistance and retreat amount;

FIG. 34 is a graph showing the relationship of the semiconductor devicebetween on resistance and taper angle;

FIG. 35 is a graph showing the relationship of the semiconductor devicebetween S value and taper angle;

FIG. 36 is a graph showing an electric field intensity distribution ofsemiconductor devices having a retreat amount Ld of 0, having a retreatamount Ld of 0.2 μm, and having no field plate electrode, respectively;

FIG. 37 is a cross-sectional view schematically showing theconfiguration of the semiconductor device having no field plateelectrode;

FIG. 38 is a cross-sectional view schematically showing theconfiguration of a semiconductor device of Third Embodiment;

FIG. 39 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Third Embodiment;

FIG. 40 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Third Embodiment following the step shown inFIG. 39;

FIG. 41 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Third Embodiment following the step shown inFIG. 40;

FIG. 42 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Third Embodiment following the step shown inFIG. 41;

FIG. 43 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Third Embodiment following the step shown inFIG. 42;

FIG. 44 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Third Embodiment following the step shown inFIG. 43;

FIG. 45 is a cross-sectional view showing a manufacturing step of thesemiconductor device of Third Embodiment following the step shown inFIG. 44; and

FIG. 46 is a circuit diagram showing the configuration of an electronicdevice of Fourth Embodiment.

DETAILED DESCRIPTION

In the below-described embodiments, a description will be made afterdivided into a plurality of sections or embodiments if necessary forconvenience sake. They are not independent from each other, but in arelation such that one is a modification example, application example,detailed description, a complementary description, or the like of a partor whole of the other one unless otherwise specifically indicated. And,in the below-described embodiments, when a reference is made to thenumber of elements (including the number, value, amount, range, or thelike), the number is not limited to a specific number but may be more orless than the specific number, unless otherwise specifically indicatedor principally apparent that the number is limited to the specificnumber.

Further, in the below-described embodiments, the constituent component(including constituent step or the like) is not always essential unlessotherwise specifically indicated or principally apparent that it isessential. Similarly, in the below-described embodiments, when areference is made to the shape, positional relationship, or the like ofthe constituent component, that substantially approximate or analogousto it is also embraced unless otherwise specifically indicated orprincipally apparent that it is not. This also applies to theabove-described number (number, value, amount, range, and the like).

Embodiments will hereinafter be described in detail based on somedrawings. In all the drawings for describing the embodiments, members ofa like function will be identified by like reference numerals or relatedreference numerals and overlapping descriptions will be omitted. Whenthere are two or more members (sites) analogous to each other,individual or specific sites may be indicated by a generic referencenumeral followed by a symbol. In the below-described embodiments, adescription on the same or similar portion is not repeated in principleunless otherwise particularly necessary.

In the drawings to be used in the following embodiments, even across-sectional view is sometimes not hatched to facilitateunderstanding of it.

In the cross-sectional view, the size of each site does not correspondto that of an actual device. To facilitate understanding of the drawing,some sites may be shown in a relatively large size.

First Embodiment

Referring to drawings, a semiconductor device of the present embodimentwill hereinafter be described in detail. FIG. 1 is a cross-sectionalview showing the configuration of the semiconductor device of thepresent embodiment. FIGS. 2 to 16 are cross-sectional views showingmanufacturing steps of the semiconductor device of the presentembodiment, respectively.

[Description on Structure]

FIG. 1 is a cross-sectional view showing the configuration of thesemiconductor device of the present embodiment. The semiconductor deviceshown in FIG. 1 is a MIS (metal insulator semiconductor) type fieldeffect transistor (FET) using a nitride semiconductor. Thissemiconductor device is also called “high electron mobility transistor”or power transistor. The semiconductor device of the present embodimentis a so-called recess gate type semiconductor device.

The semiconductor device of the present embodiment has, on a substrate Sthereof, a nucleus forming layer NUC, a strain relaxing layer STR, abuffer layer BU, a channel layer (also called “electron transit layer”)CH, and a barrier layer BA stacked one after another in the order ofmention. The gate electrode GE lies, via a gate insulating film GI, in atrench T that penetrates through the barrier layer BA and reaches theinside of the channel layer. The channel layer CH and the barrier layerBA are made of a nitride semiconductor and the barrier layer BA is madeof a nitride semiconductor having a band gap wider than that of thechannel layer CH.

A two-dimensional electron gas 2DEG is formed on the side of the channellayer CH in the vicinity of the interface between the channel layer CHand the barrier layer BA. When a positive electric potential (thresholdpotential) is applied to the gate electrode GE, a channel C is formed inthe vicinity of the interface between the gate insulating film GI andthe channel layer CH. As resistance of a region in which the channel Cis formed, there are a channel resistance Rch which is a MIS channelresistance generated along the bottom surface of the trench T, a channelresistance Ras which is a MIS channel resistance generated along theside surface (also called “sidewall”) on the side of the sourceelectrode SE of the trench T, and a channel resistance Rad which is aMIS channel resistance generated along the side surface of the trench Ton the side of the drain electrode DE.

The two-dimensional electron gas 2DEG is formed by the followingmechanism. Nitride semiconductors (meaning, in this example, galliumnitride-based semiconductors) configuring the channel layer CH and thebarrier layer BA are different from each other in forbidden band width(band gap) or electron affinity. A well type potential is thereforeformed at a junction plane of these semiconductors. When electrons areaccumulated in this well-type potential, a two-dimensional electron gas2DEG is formed in the vicinity of the interface between the channellayer CE and the barrier layer BA.

The two-dimensional electron gas 2DEG formed in the vicinity of theinterface between the channel layer CH and the barrier layer BA isseparated by the trench T having the gate electrode GE therein. In thesemiconductor device of the present embodiment, therefore, an off statecan be maintained when a positive electric potential (thresholdpotential) is not applied to the gate electrode GE and an on state canbe maintained when a positive electric potential (threshold potential)is applied to the gate electrode GE. Thus, a normally-off operation canbe performed.

The configuration of the semiconductor device of the present embodimentwill next be described more specifically. As shown in FIG. 1, in thesemiconductor device of the present embodiment, a substrate S hasthereon a nucleus forming layer NUC and the nucleus forming layer NUChas thereon a strain relaxing layer STR. The nucleus forming layer NUCis formed to generate crystal nuclei necessary for the growth of a layerto be formed on the nucleus forming layer such as the strain relaxinglayer STR. It is also formed to prevent the substrate S from undergoinga quality change which will otherwise occur by the diffusion of aconstituent element (such as Ga) of the layer formed thereon. The strainrelaxing layer STR is formed to relax a stress to the substrate S toprevent warpage or cracks of the substrate S.

This strain relaxing layer STR has thereon a buffer layer BU. The bufferlayer BU has thereon a channel layer (also called “electron transitlayer”) CH made of a nitride semiconductor layer. The channel layer CHhas thereon a barrier layer BA made of a nitride semiconductor. Thismeans that the strain relaxing layer STR has, on the main surface (uppersurface) thereof, the buffer layer BU, the channel layer CH, and thebarrier layer BA formed (stacked) one after another in the order ofmention. The barrier layer BA has thereon a source electrode SE and adrain electrode DE via an ohmic layer. The buffer layer BU is anintermediate layer located between the channel layer CH and the strainrelaxing layer STR.

The gate electrode GE is formed, via a gate insulating film GI, inside atrench (also called “trench” or “recess”) T that penetrates through aninsulating film IF1 and the barrier layer BA and reaches the inside ofthe channel layer CH.

The gate insulating film GI is made of a stacked film (which may also becalled laminate film) of the insulating film IF1 and an insulating filmIF2. The insulating film IF1 has an opening portion in an opening regionOA1. This opening portion is provided in a region wider, on the side ofthe drain electrode DE, by a distance Ld than the formation region(opening region OA2) of the trench T. In other words, the insulatingfilm IF1 is caused to retreat by the distance Ld from the end portion ofthe trench T on the side of the drain Electrode DE. This distance Ld issometimes called “retreat amount Ld”.

As described above, the insulating film IF1 is placed so as to cause itto retreat by the distance Ld from the end portion of the trench T onthe side of the drain electrode DE and the insulating film IF2 is placedabove the insulating film IF1 including the inside the trench T. As aresult, the thickness of the gate insulating film GI made of a stackedfilm of the insulating film IF1 and the insulating film IF2 becomes afilm thickness T1 corresponding to the thickness of the insulating filmIF2 at the end portion of the trench T on the side of the drainelectrode DE and from the position exceeding the retreat amount Ld onthe side of the drain electrode DE, it becomes a film thickness T2 (>T1)corresponding to the sum of the thicknesses of the insulating film IF1and the insulating film IF2.

In other words, the gate insulating film GI has, from the end portion ofthe trench T on the side of the drain electrode DE to the drainelectrode DE, a first portion made of a single layer film of theinsulating film IF2 and a second portion located on the side of thedrain electrode DE relative to the first portion and made of a stackedfilm of the insulating film IF1 and the insulating film IF2. Thedistance from the end portion of the trench T on the side of the drainelectrode DE to the second portion (the end portion of the insulatingfilm IF2 on the side of the trench T) corresponds to the distance Ld.

The gate insulating film GI made of a stacked film of the insulatingfilm IF1 and the insulating film IF2 has thereon the gate electrode GE.This gate electrode GE has an overhang in one direction (right side,that is, the side of the drain electrode in FIG. 1). This overhang iscalled “field plate electrode (also called “field plate electrodeportion”) FP. This field plate electrode FP is a region of a portion ofthe gate electrode GE extending from the end portion of the trench T onthe side of the drain electrode DE to the side of the drain electrodeDE.

The gate electrode GE (field plate electrode FP) is located on the firstportion made of the single layer film of the insulating film IF2 and isalso located on the second portion located on the side of the drainelectrode DE relative to the first portion and made of a stacked film ofthe insulating film IF1 and the insulating film IF2. In other words, thefield plate electrode FP has therebelow the first portion made of asingle layer film of the insulating film IF2 and the second portionlocated on the side of the drain electrode DE relative to the firstportion and made of a stacked film of the insulating film IF1 and theinsulating film IF2.

As described above, on the gate insulating film GI made of the firstportion located at the end portion of the trench T on the side of thedrain electrode DE and the second portion located on the side of thedrain electrode DE relative to the first portion and having a filmthickness greater than that of the first portion, the gate electrode GEincluding the field plate electrode FP is placed. Such a structurereduces the thickness (T1) of the gate insulating film GI at the endportion of the trench T on the side of the drain electrode DE so thatgate modulation becomes effective at the drain electrode DE side bottomportion and side surface of the trench T in which a channel C is to beformed. This means that such a structure facilitates formation of thechannel C. As a result, a channel resistance Rad generated along theside surface of the trench T on the side of the drain electrode DE canbe reduced.

By providing the first portion and the second portion, as describedlater in detail, the electric field concentrated site below the fieldplate electrode FP is dispersed into two sites (refer to FIG. 18). Suchdispersion relaxes the electric field concentration and improves a gatebreakdown voltage. Further, it reduces the length of the field plateelectrode FP and therefore reduces the distance between the gateelectrode GE and the drain electrode DE. A downsized orhighly-integrated semiconductor device can therefore be obtained.

The barrier layer BA on both sides of this gate electrode GE has thereona source electrode SE and a drain electrode DE. Compared with thedistance between the end portion of the trench T and the sourceelectrode SE, the distance between the end portion of the trench T tothe drain electrode DE is greater. The source electrode SE and the drainelectrode DE are coupled to the barrier layer BA via the opening portionof the insulating film IF1 and the insulating layer IL1. They arecoupled by ohmic coupling.

The gate electrode GE has thereon the insulating layer IL1. The sourceelectrode SE and the drain electrode DE are placed in and also on acontact hole formed in the insulating layer IL1. These insulating layerIL1, source electrode SE, and drain electrode DE have thereon aninsulating layer IL2.

[Description on Manufacturing Method]

Referring to FIGS. 2 to 16, a method of manufacturing the semiconductordevice of the present embodiment will hereinafter be described and theconfiguration of the semiconductor device will be shown more clearly.FIGS. 2 to 16 are cross-sectional views showing manufacturing steps ofthe semiconductor device of the present embodiment.

As shown in FIG. 2, a nucleus forming layer NUC, a strain relaxing layerSTR, and a buffer layer BU are formed successively on a substrate S. Forexample, a semiconductor substrate made of silicon (Si) with the exposed(111) plane is used as the substrate S and on the substrate,hetero-epitaxial growth of, for example, an aluminum nitride (AlN) layeris performed using metal organic chemical vapor deposition (MOCVD) orthe like method to form the nucleus forming layer NUC. Then, on thenucleus forming layer NUC, a superlattice structure is formed as thestrain relaxing layer STR by repeating stacking of a stacked film(AlN/GaN film) of a gallium nitride (GaN) layer and an aluminum nitride(AlN) layer. For example, hetero-epitaxial growth of a gallium nitride(GaN) layer and an aluminum nitride (AlN) layer is repeated using metalorganic chemical vapor deposition or the like method to form about 100layers (200 layers in total), each having a film thickness of about from2 to 3 nm. As the substrate S, a substrate made of SiC, sapphire, or thelike may be used instead of the substrate made of silicon. All the groupIII nitride layers including the nucleus forming layer NUC and thoseformed after the nucleus forming layer NUC are ordinarily formedaccording to the group III element plane growth (meaning, in this case,a gallium plane growth or aluminum plane growth).

Next, a buffer layer BU is formed on the strain relaxing layer STR. Forexample, an AlGaN layer is formed as the buffer layer BU on the strainrelaxing layer STR by hetero-epitaxial growth by using metal organicchemical vapor deposition or the like method.

Next, a channel layer CH is formed on the buffer layer BU. For example,a gallium nitride (GaN) layer is formed on the buffer layer BU byhetero-epitaxial growth by using metal organic chemical vapor depositionor the like method. The resulting channel layer CH has a film thicknessof, for example, 3 nm or greater.

Next, for example, an AlGaN layer is formed as a barrier layer BA on thechannel layer by hetero-epitaxial growth CH by using metal organicchemical vapor deposition or the like method. The composition ratio ofAl in this AlGaN layer as the barrier layer BA is greater than thecomposition ratio of Al in the AlGaN layer as the buffer layer BU.

In such a manner, a stacked body of the buffet layer BU, the channellayer CH, and the barrier layer BA is formed. This stacked body isformed by the group III plane growth in which stacking is conducted in a[0001] crystal axis (C axis) direction. In other words, theabove-mentioned stacked body is formed by (0001) Ga plane growth. In thevicinity of the interface of the stacked body between the channel layerCH and the barrier layer BA, a two-dimensional electron gas 2DEG isformed.

Next, as shown in FIG. 3, an insulating film IF1 as a cover film isformed on the barrier layer BA. Using a silicon nitride film as thecover film is preferred. This silicon nitride film is effective forsuppressing a current collapse phenomenon in a GaN device. The siliconnitride film can be formed by CVD or ECR sputtering. ECR sputteringtends to use a complex device so that CVD is frequently used for massproduction. As the insulating film IF1, for example, silicon nitridefilm (silicon nitride-containing film) having a film thickness of about900 angstrom (1 A=10⁻¹⁰ m) is deposited as the insulating film IF1 byusing CVD (chemical vapor deposition) or the like method. Next, asilicon oxide film having a thickness of about 900 angstrom is depositedas a masking insulating film IFM on the insulating film IF1 by using CVDor the like method.

Next, as shown in FIG. 4, a photoresist film PR1 having, in an openingregion OA1, an opening portion is formed by photolithography. Next, asshown in FIG. 5, with the photoresist film PR1 as a mask, the maskinginsulating film IFM is etched. For example, a hydrocarbon gas such asC₄H₈ can be used as an etching gas of the silicon oxide film. By thisetching, the masking insulating film IFM having, in the opening rangeOA1, an opening portion is formed as shown in FIG. 5. Next, as shown inFIG. 6, plasma stripping treatment or the like is conducted to removethe photoresist film PR1.

Next, as shown in FIG. 7, a photoresist film PR2 having an openingportion in an opening region OA2 located inside the opening region OA1is formed using photolithography. Next, as shown in FIG. 8, with thephotoresist film PR2 as a mask, the insulating film IF1 is etched. As anetching gas of the silicon nitride film, for example, a fluorine-basedgas such as SF₆ or CF₄ can be used. Since the underlying barrier layerBA (AlGaN layer) is scarcely etched by the fluorine-based gas, thefluorine-based gas is suited as an etching gas of the masking insulatingfilm IFM (silicon oxide film).

Next, the photoresist film PR2 is removed by plasma stripping treatmentor the like. By this treatment, as shown in FIG. 9, the insulating filmIF1 having an opening portion in the opening region OA2 is formed on thebarrier layer BA. Further, the masking insulating film IFM caused toretreat from one end of the opening region OA2 and having an openingportion in the opening region OA1 is placed on this insulating film IF1.This insulating film IF1 becomes a part of the gate insulating film GI,while the insulating film IFM becomes a mask during etching for causingthe insulating film IF1 to retreat from the end portion of the trench Twhich will be described later.

Next, as shown in FIG. 10, with the stacked film of the insulating filmIF1 and the insulating film IFM as a mask, the barrier layer BA and thechannel layer CH (also called “stacked body”) is etched to form a trenchT penetrating through the insulating film IF1 and the barrier layer BAand reaching the inside of the channel layer CH. As an etching gas, forexample, a chlorine-based gas (such as BCl₃) is used. Although notclearly shown in FIG. 10, at the surface of the insulating film IFM orthe exposed portion of the insulating film IF1, these films may beetched and become thinner during etching for forming the trench T. Thisetching may be followed by heat treatment (annealing) for recovering theetching damage.

Next, as shown in FIG. 11, with the masking insulating film IFM as amask, the insulating film IF1 is etched. By this etching, the endportion of the insulating film IF1 on the side of the trench T is causedto retreat in one direction (right side in FIG. 11). The retreat amount(retreat distance) will hereinafter be called “Ld”. This retreat occursin a direction to the side of the drain electrode DE which will bedescribed later. Next, as shown in FIG. 12, the making insulating filmIFM is removed by etching.

The remaining stacked film of the mask insulating film IFM and theinsulating film IF1 corresponding to a predetermined thickness (filmthickness of the exposed portion of the insulating film IF1) may beetched back to cause the end portion of the insulating film IF1 on theside of the trench T to retreat. During this etch back, an etchingamount may be adjusted so as to completely remove the masking insulatingfilm IFM. When the masking insulating film IFM remains, the remaininginsulating film IFM may be removed by separate etching.

Next, as shown in FIG. 13, an insulating film IF2 is formed on theinsulating film IF1 as well as in the trench T and on the exposedportion of the barrier layer BA. The insulating film IF1 and theinsulating film IF2 function as a gate insulating film GI. This meansthat the insulating film GI contributing to gate modulation when apositive electric potential (threshold potential) is applied to the gateelectrode GE is mainly a portion of the insulating film IF2.

For example, as the insulating film IF2, alumina (aluminum oxide film,Al₂O₃) is deposited on the insulating film IF1, in the trench T, and onthe exposed portion of the barrier layer BA by using ALD (atomic layerdeposition). As the insulating film IF2, as well as alumina(alumina-containing film), a silicon oxide film or a high dielectricconstant film having a dielectric constant higher than that of a siliconoxide film may be used. As the high dielectric constant film, a hafniumoxide (HfO₂ film) may be used. As the high dielectric constant film, ahafnium-based insulating film such as hafnium aluminate film, HfON film(hafnium oxynitride film), HfSiO film (hafnium silicate film), HfSiONfilm (hafnium silicon oxynitride film), or HfAlO film may be usedinstead.

In such a manner, the gate insulating film GI is comprised of a stackedfilm of the insulating film IF1 and the insulating film IF2 as describedabove. As a result, the trench T has, on the side of the sidewallthereof, a first film thickness portion made of a single layer film ofthe insulating film IF2. On the side of the drain electrode DE whichwill be described later, a second film thickness portion comprised of astacked film of the insulating film IF1 and the insulating film IF2 isprovided. The thickness T2 of the second film thickness portion isgreater than the film thickness T1 of the first film thickness portion(refer to FIG. 13).

Next, a gate electrode GE is formed on the gate insulating film GIinside the trench T. For example, on the gate insulating film GI, astacked film (which may also be called “Au/Ni film”) made of, forexample, a nickel (Ni) film and a gold (Au) film lying thereon isdeposited as a conductive film by sputtering or the like method. Next,photolithography and etching are used to pattern the Au/Ni film andthereby form a gate electrode GE. During etching of this Au/Ni film, theinsulating film IF2 therebelow may be etched.

During this patterning, the gate electrode GE is patterned to have anoverhang in one direction (the right side, that is, the side of thedrain electrode DE in FIG. 13). In other words, patterning is carriedout to provide a field plate electrode (which may also be called “fieldplate electrode portion”) FP as a part of the gate electrode GE. Thefield plate electrode FP is a partial region of the gate electrode GEand it is an electrode portion extending to the side of the drainelectrode DE from the end portion of the trench T on the side of thedrain electrode DE.

This means that the field plate electrode FP is placed so as to coverthe upper part of the first film thickness portion made of a singlelayer film of the insulating film IF2 and the upper part of the secondfilm thickness portion located on the side of the drain electrode DErelative to the first film thickness portion and made of a stacked filmof the insulating film IF1 and the insulating film IF2.

Next, as shown in FIG. 14, the insulating film IF1 is removed from theformation regions of the source electrode SE and the drain electrode DEwhich will be described later. By patterning the insulating film IF1 byusing photolithography and etching, the barrier layer BA in theformation regions of the source electrode SE and the drain electrode DEis exposed. Alternatively, this removal of the insulating film IF1 maybe performed at the time of forming a contact hole C1 which will bedescribed later.

Next, as shown in FIG. 15, an insulating layer IL1 is formed on the gateelectrode GE. As the insulating layer IL1, for example, a silicon oxidefilm is formed using CVD or the like on the gate electrode GE, theinsulating film IF1, and the barrier layer BA. Then, a contact hole C1is formed in the insulating layer IL1 by using photolithography andetching. This contact hole C1 is placed on the barrier layer BA on bothsides of the gate electrode GE.

Next, as shown in FIG. 16, an ohmic layer (not illustrated) is formed onthe insulating layer IL1 including the inside of the contact hole C1.For example, a stacked film (which may also be called “Al/Ti film”) madeof a titanium (Ti) film and an aluminum (Al) film lying thereon isdeposited both on the insulating layer IL1 including the inside of thecontact hole C1 by using vapor deposition or the like. Further, forexample, a stacked film (which may also be called “TiN/Ti film”) made ofa titanium (Ti) film and a titanium nitride film (TiN) lying thereon isdeposited on the Al/Ti film by using sputtering or the like. As aresult, a stacked film (which may also be called “TiN/Ti/Al/Ti film”)made of a titanium (Ti) film, an aluminum (Al) film, a titanium (Ti)film, and a titanium nitride (TiN) film is formed. Then, heat treatmentis performed, for example, at 550° C. for about 30 minutes. By this heattreatment, contact at the interface between the TiN/Ti/Al/Ti film andthe GaN based semiconductor (ohmic layer not illustrated) becomes anohmic contact. Then, an aluminum alloy film is deposited on theTiN/Ti/Al/Ti film (ohmic layer, not illustrated) by using sputtering orthe like. As the aluminum alloy, for example, an alloy (Al—Si) of Al andSi, an alloy (Al—Cu) of Al and Cu (copper), an alloy (Al—Si—Cu) of Al,Si, and Cu can be used. Next, the TiN/Ti/Al/Ti film and the aluminumalloy film are patterned using photolithography and etching torespectively form a source electrode SE and a drain electrode DE in thecontact holes C1 via the ohmic layer (not illustrated).

Next, an insulating layer (which may also be called “cover film” or“surface protective film”) IL2 is formed on the insulating layer IL1 andalso on the source electrode and the drain electrode DE. As theinsulating layer IL2, for example, a silicon oxynitride (SiON) film isdeposited on the insulating layer IL1 and also on the source electrodeSE and the drain electrode DE by using CVD or the like.

By the above-described steps, the semiconductor device as shown in FIG.1 can be fabricated. The above-mentioned steps are only exemplary andthe semiconductor device of the present embodiment may be manufacturedthrough steps other than the above-mentioned ones.

According to the present embodiment, the insulating film IF1 of the gateinsulating film GI, which is made of the insulating IF1 and theinsulating film IF2, is caused to retreat by the distance Ld from theend portion of the trench T on the side of the drain electrode DE andmoreover, the insulating film IF2 is placed on the insulating film IF1including the inside the trench T so that the gate insulating film GIbelow the field plate electrode FP can have a stepped structure(two-stage structure). In other words, the field plate electrode FP has,therebelow, a first portion made of a single layer film of theinsulating film IF2 and a second portion located on the side of thedrain electrode DE relative to the first portion and made of a stackedfilm of the insulating film IF1 and the insulating film IF2.

In such a structure, as described above, the film thickness of the gateinsulating film GI at the end portion of the trench T on the side of thedrain electrode DE decreases (to the film thickness T1) so that gatemodulation becomes effective at the drain electrode DE side bottomportion and side surface of the trench T in which a channel C is to beformed. This means that such a structure facilitates formation of thechannel C. As a result, a channel resistance Rad generated along theside surface of the trench T on the side of the drain electrode DE canbe reduced.

Since the first portion and the second portion are provided, theelectric field concentrated sites below the field plate electrode FP isdispersed in two sites as will be described in detail later (refer toFIG. 18). This dispersion leads to relaxation of electric fieldconcentration and improvement in gate breakdown voltage. Further, thismakes it possible to reduce the length of the field plate electrode FPand therefore reduce the distance between the gate electrode GE and thedrain electrode DE. A downsized or highly-integrated semiconductordevice can therefore be obtained.

FIG. 17 is a cross-sectional view schematically showing theconfiguration of a semiconductor device of Comparative Example. FIG. 18is a cross-sectional view schematically showing the configuration of thesemiconductor device of the present embodiment in the vicinity of thegate electrode thereof.

In the semiconductor device of Comparative Example shown in FIG. 17, theend portion of the insulating film IF1 on the side of the trench T isnot caused to retreat to the side of the drain electrode DE and theinsulating film IF1 extends to the sidewall of the trench T. In thiscase, the thickness of the insulating film at the end portion of thetrench T on the side of the drain electrode DE is a film thickness (T2)corresponding to the sum of the film thicknesses of the insulating filmIF1 and the insulating film IF2. This means that the insulating film ofthis example is thicker (T2>T1) than that of the semiconductor device ofthe present embodiment shown in FIG. 18.

In the semiconductor device of Comparative Example shown in FIG. 17,channel resistance Rad generated along the side surface of the trench Ton the side of the drain electrode DE may increase. During operation ofthe semiconductor device, the channel C formed along the side surface ofthe trench T on the side of the drain electrode DE shows a positiveelectric potential, influenced by a large positive drain voltage biasedby the drain electrode DE. As described above, however, when the filmthickness (T2) of the insulating film at the end portion of the trench Ton the drain electrode DE is large, a distance between the field plateelectrode FP of the gate electrode GE and the barrier layer BA(semiconductor region, nitride semiconductor region) increases and thechannel C at the end portion of the trench T on the side of the drainelectrode DE is not modulated sufficiently by a gate voltage. Thechannel C at the end portion of the trench T on the side of the drainelectrode DE therefore has an effectively high threshold value Vth,inevitably leading to an increase in on resistance.

Further, an increase in on resistance occurs by channel narrowing. Thismeans that a negative polarization charge (e) is generated on thesurface of the AlGaN layer which is the barrier layer BA (refer to FIG.17). The silicon nitride film (SiN film) used as the insulating film IF1however cannot sufficiently compensate for the polarization charge (e)(refer to Non-patent Document 3 and the like). In particular, a siliconnitride film (SiN film) formed using thermal CVD or plasma CVD(Plasma-enhanced CVD) tends to have a Si-rich film composition. It hasbeen revealed by the investigation by the present inventors that aSi-rich silicon nitride film is less effective for compensating for anegative polarization charge (e) on the surface of the AlGaN layer.

In the structure in which the channel portion at the end portion of thetrench T on the side of the drain electrode DE is covered with a Si-richsilicon nitride film formed using thermal CVD or plasma CVD, therefore,channel narrowing is likely to occur at the channel C at the end portionof the trench T on the side of the drain electrode DE due to theinfluence of a negative polarization charge (e) which has remainedwithout compensation. This channel narrowing leads to a further increasein the on resistance of the semiconductor device.

The polarization charge (e) on the uppermost surface of the barrierlayer BA (semiconductor region, nitride semiconductor region) can bechanged from negative to positive by covering the surface of the AlGaNlayer, which is the barrier layer BA, with a cap layer made of GaN. Theon-resistance increase problem due to channel narrowing can be overcomeby the above-mentioned method. In the structure using the cap layer madeof GaN, however, due to the influence of the negative polarizationcharge at the interface between the cap layer made of GaN and thebarrier layer BA made of the AlGaN layer, the sheet charge density Ns ofthe channel C which is important inevitably decreases at the interfacebetween the barrier layer BA made of the AlGaN layer and the channellayer CH made of GaN. It is thus difficult to suppress an increase inthe on resistance even by using the cap layer made of GaN.

In the semiconductor device of Comparative Example shown in FIG. 17,electric field concentration occurs at the end portion (point P2) of thefield plate electrode FP of the gate electrode GE on the side of thedrain electrode DE during operation of the semiconductor device.Breakage is therefore likely to occur in the barrier layer BA(semiconductor region, nitride semiconductor region) just below the endportion (point P2) of the field plate electrode FP on the side of thedrain DE.

In the semiconductor device of the present embodiment (FIG. 18), on theother hand, the end portion of the insulating film IF1 on the side ofthe trench T is caused to retreat to the side of the drain electrode DEso that film thickness (T1) of the insulating film decreases at the endportion of the trench T on the side of the drain electrode DE. Thisdecreases a distance between the field plate electrode FP of the gateelectrode GE and the semiconductor region (nitride semiconductor region)and increases gate-voltage-dependent modulation at the channel portionat the end portion of the trench T on the side of the drain electrodeDE. This makes it possible to reduce the threshold value Vth of thechannel portion at the end portion of the trench T on the side of thedrain electrode DE and thereby reduce the on resistance.

Further, since the the insulating film IF1 (silicon nitride film, SiNfilm) not capable of sufficiently compensating for the negativepolarization charge (e) on the surface of the AlGaN layer which is thebarrier layer BA is caused to retreat, the insulting film IF2 and theAlGaN layer serving as the barrier layer BA make contact with each otherat the end portion of the trench T on the side of the drain electrodeDE. In particular, by selecting, as the insulating film IF2, aninsulating film material more effective in compensating for the negativepolarization charge (e) than the insulating film IF1 (silicon nitridefilm, SiN film), channel narrowing can be suppressed. When alumina isused as the insulating film IF2, it can offset the negative polarizationcharge (e) at the interface between alumina and the AlGaN layer becauseit is more effective in compensating for the negative polarizationcharge (e) on the surface of the AlGaN layer than a silicon nitride film(refer to, for example, Non-patent Document 4). This therefore makes itpossible to suppress generation of channel narrowing of the channelportion at the end portion of the trench T on the side of the drainelectrode DE and thereby reduce the on resistance.

In the semiconductor device of the present embodiment (FIG. 18), the endportion of the insulating film IF1 on the side of the trench T is causedto retreat to the side of the drain electrode DE and the gate insulatingfilm GI lying below the field plate electrode FP is equipped with astepped structure (two-stage structure) so that electric fieldconcentration is relaxed. Described specifically, as shown in FIG. 18,during operation of the semiconductor device, the electric fieldconcentration is dispersed into two positions, that is, the end portion(point P1) of the insulating film IF1 on the side of the trench T andthe end portion (point P2) of the field plate electrode FP of the gateelectrode GE on the side of the drain electrode DE. The end portion(point P1) of the insulating film IF1 on the side of the trench T is aboundary between the first film thickness portion and the second filmthickness portion. Due to the dispersion of the electric fieldconcentrated position into two points, the electric field concentrationis relaxed and a gate breakdown voltage increases (refer also to FIG. 36of Second Embodiment). In addition, the length of the field plateelectrode FP of the gate electrode GE or distance between the gateelectrode GE and the drain electrode DE can be decreased. As a result, adownsized or highly-integrated semiconductor device can therefore beobtained.

Modification examples of the present embodiment will hereinafter bedescribed.

Modification Example 1

In the above-described embodiment, the end portion of the insulatingfilm IF1 on the side of the trench T is caused to retreat only to theside of the drain electrode DE. Alternatively, the end portions of theinsulating film IF1 on the side of the trench T on the side of the drainelectrode DE and on the side of the source electrode SE may be caused toretreat. FIG. 19 is a cross-sectional view schematically showing theconfiguration of Modification Example 1 of the semiconductor device ofthe present embodiment.

As shown in FIG. 19, the end portion of the insulating film IF1 on theside of the drain electrode DE is caused to retreat by a retreat amountLd from the end portion of the trench T to the side of the drainelectrode DE and further, the end portion of the insulating film IF1 onthe side of the source electrode SE is caused to retreat by a retreatamount Ls from the end portion of the trench T to the side of the sourceelectrode SE. In this case, even between the end portion of the trench Tand the source electrode SE, the gate insulating film GI lying below thegate electrode GE has a stepped structure (two-stage structure). Theother configuration is similar to that of the above embodiment so that adescription on it is omitted. In a manufacturing method, a formationregion of the opening region OA1 is formed by making it wider than theopening region OA2 by the distance Ls to the side of the sourceelectrode SE and by the distance Ld to the side of the drain electrodeDE. In such a manner, the opening region OA1 larger than the openingregion OA2 is formed. A masking insulating film IFM having an openingportion in the opening region OA1 is formed and with this film as amask, the insulating film IF1 is etched. The other steps are similar tothose of the above embodiment so that a description on them is omitted.

Modification Example 2

In the above embodiment, the sidewall of the trench T is madesubstantially perpendicular (taper angle θ=90°) to the surface of thebarrier layer BA or the channel layer CH, but the sidewall of the trenchT may be tapered. FIG. 20 is a cross-sectional view schematicallyshowing the configuration of Modification Example 2 of the semiconductordevice of the present embodiment.

As shown in FIG. 20, in this example, the angle (which may also becalled “taper angle θ”) between the side surface (sidewall) of thetrench T and the extension of the bottom surface of the trench T is lessthan 90°. In other words, the angle between the side surface (sidewall)of the trench T and the (111) plane is less than 90°. The otherconfiguration is similar to that of the above embodiment so that adescription on it is omitted. In the manufacturing method, etchingconditions for the formation of the trench T are regulated so as totaper the sidewall of the trench T. For example, etching is conductedunder the condition in which an isotropic etching gas component exceedsan anisotropic etching gas component. The other step is similar to thatof the above embodiment so that a description on it is omitted.

Second Embodiment

In Modification Example 1 of First Embodiment, both the end portion ofthe insulating film IF1 on the side of the trench T on the side of thedrain electrode DE and that on the side of the source electrode SE arecaused to retreat, while in Modification Example 2, the sidewall of thetrench T is tapered. It is also possible to taper the sidewall of thetrench T while causing both the end portion of the insulating film IF1on the side of the trench T on the side of the drain electrode DE andthat on the side of the source electrode SE to retreat. FIG. 21 is across-sectional view schematically showing the configuration of asemiconductor device of the present embodiment.

[Description on Structure]

As shown in FIG. 21, in the semiconductor device of the presentembodiment, the end portion of the insulating film IF1 on the side ofthe trench T on the side of the drain electrode DE is caused to retreatby a retreat amount Ld to the side of the drain electrode DE and the endportion of the insulating film IF1 on the side of the trench T on theside of the source electrode SE is caused to retreat by a retreat amountLs to the side of the source electrode SE. Further, the angle θ betweenthe side surface (sidewall) of the trench T and the extension of thebottom surface of the trench T is set at less than 90°. The otherconfiguration is similar to that of First Embodiment so that adescription on it is omitted.

[Description on Manufacturing Method]

Next, referring to FIGS. 22 to 30, a method of manufacturing thesemiconductor device of the present embodiment will be described and atthe same time, the configuration of this semiconductor device will beshown more clearly. FIGS. 22 to 30 are cross-sectional views showing themanufacturing steps of the semiconductor device of the presentembodiment. A detailed description on steps similar to those of FirstEmbodiment will be omitted.

Similar to First Embodiment, a stacked body of a nucleus forming layerNUC, a strain relaxing layer STR, a buffer layer BU, a channel layer CH,and a barrier layer BA is formed on a substrate S (refer to FIG. 2).

Next, as shown in FIG. 22, an insulating film IF1 is formed as a coverfilm on the barrier layer BA. As the insulating film IF1, for example, asilicon nitride film having a thickness of about 900 angstrom isdeposited using CVD or the like method. Next, a silicon oxide filmhaving a thickness of about 900 angstrom is deposited as a maskinginsulating film IFM on the insulating film IF1 by using CVD or the likemethod.

Next, as shown in FIG. 23, a photoresist film PR1 having an openingportion in an opening region OA1 is formed using photolithography. Thewidth of the opening is, for example, about 1.8 μm. Next, as shown inFIG. 24, with the photoresist film PR1 as a mask, the masking insulatingfilm IFM is etched. As an etching gas of the silicon oxide film, forexample, a hydrocarbon gas such as C₄H₈ can be used. Then, thephotoresist film PR1 is removed using plasma stripping treatment or thelike. As a result, as shown in FIG. 25, the masking insulating film IFMhaving an opening portion in the opening region OA1 is formed on theinsulating film IF1.

Next, as shown in FIG. 26, a photoresist film PR2 having an openingportion in an opening region OA2 located inside the opening region OA1is formed using photolithography. For example, the opening region OA2 islocated at a substantially center portion of the opening region OA1 andit has an opening width of about 1 μm. Next, as shown in FIG. 27, withthe photoresist film PR2 as a mask, the insulating film IF1 is etched.As an etching gas of the silicon nitride film, for example, afluorine-based gas such as SF₆ or CF₄ can be used. The barrier layer BA(AlGaN layer) lying therebelow is scarcely etched with thefluorine-based gas so that using the fluorine-based gas as an etchinggas of the insulating film IF1 (silicon nitride film) is suited. Next,the photoresist film PR2 is removed using plasma stripping treatment orthe like. As a result, as shown in FIG. 28, the insulating film IF1having an opening portion in the opening region OA2 is formed on thebarrier layer BA. Further, on this insulating film IF1, the maskinginsulating film IFM caused to retreat from both ends of the openingregion OA2 and having an opening portion in the opening region OA1 isplaced. The insulating film IF1 becomes a part of the gate insulatingfilm GI. The insulating film IFM becomes a mask upon etching for causingthe insulating film IF1 to retreat from the end portion of the trench Twhich will be described later.

Next, as shown in FIG. 29, with the insulating film IFM and theinsulating film IF1 as a mask, the barrier layer BA and the channellayer CH are etched to form a trench T penetrating through theinsulating film IF1 and the barrier layer B and reaching the inside ofthe channel layer CH. As an etching gas, for example, a chlorine-basedgas such as BCl₃ can be used. The depth of the trench T, that is, thedistance from the surface of the barrier layer BA to the bottom surfaceof the trench T is, for example, about 300 angstrom. The angle (taperangle θ) between the sidewall of the trench T and the extension of thebottom surface of the trench T can be adjusted to about from 60 to 80°by using ordinary dry etching using BCl₃. With BCl₃, a predeterminedthickness is etched from the surface of the insulating film IFM and theexposed portion of the insulating film IF1. The remaining thickness ofthe insulating film IFM is, for example, about 600 angstrom and theremaining thickness of the exposed portion of the insulating film IF1is, for example, about 600 angstrom.

Next, a predetermined film thickness is etched back from the surface ofthe insulating film IFM and the exposed portion of the insulating filmIF1 to remove the insulating film IFM and leave the insulating film IF1.The remaining film thickness of the insulating film IF1 at the exposedportion is, for example, about 80 nm. As a result, one end portion ofthe insulating film IF1 on the side of the trench T is retreated by aretreat amount Ld in one direction (right direction in FIG. 30) and theother end portion of the insulating film IF1 on the side of the trench Tis retreated by a retreat amount Ls in the other direction (leftdirection in FIG. 30). The term “one direction” means a direction on theside of the drain electrode DE which will be described later and theterm “the other direction” means a direction on the side of the sourceelectrode SE which will be described later. The retreat amounts Ld andLs are each preferably equal to or greater than the film thickness of aninsulating film IF2, more specifically, 0.2 μm or greater. The retreatamounts Ld and Ls may be set at the same level. This etch back may befollowed by heat treatment (annealing) for recovering the etchingdamage.

Then, similar to First Embodiment, an insulating film IF2, a gateelectrode GE, a source electrode SE, a drain electrode DE, and the likeare formed (refer to FIG. 21).

Described specifically, an insulating film IF2 is formed on theinsulating film IF1 and also in the trench T and on the exposed portionof the barrier layer BA. As the insulating film (gate insulating film)IF2, for example, alumina having a thickness of about 100 nm isdeposited using ALD or the like method.

Next, a gate electrode GE is formed on the insulating film IF2. Forexample, on the gate insulating film GI, for example, a TiN film isdeposited as a conductive film by using sputtering or the like method.Then, the TiN film is patterned using photolithography and etching toform a gate electrode GE.

Upon this patterning, the gate electrode GE is patterned to have anoverhang in one direction (right side, side of the drain electrode DE inFIG. 21). In other words, patterning is performed so as to provide afield plate electrode FP as a part of the gate electrode GE. This meansthat the field plate electrode FP is placed so as to cover therewith afirst portion made of a single layer film of the insulating film IF2 anda second portion located on the side of the drain electrode DE relativeto the first portion and made of a stacked film of the insulating filmIF1 and the insulating film IF2.

Next, the insulating film IF1 is removed from the respective formationregions of the source electrode SE and the drain electrode DE which willbe described later. Next, an insulating layer (not illustrated) isformed on the gate electrode GE and a contact hole is formed in thisinsulating layer by using photolithography and etching. Next, an ohmiclayer (not illustrated) is formed on the insulating layer including theinside of the contact hole. For example, an Al alloy/Ti film (ohmiclayer, not illustrated) is formed, followed by deposition of an aluminumfilm thereon by using sputtering or the like method. Next, the Alalloy/Ti film and the aluminum film are patterned using photolithographyand etching to form a source electrode SE and a drain electrode DE viathe ohmic layer (not illustrated).

Then, for example, a silicon oxynitride (SiON) film is deposited on thesource electrode SE and the drain electrode DE by using CVD or the likemethod to form an insulating layer (not illustrated).

The semiconductor device shown in FIG. 21 can be manufactured by theabove-mentioned steps.

In the present embodiment, similar to First Embodiment, the end portionof the insulating film IF1 on the side of the trench T is caused toretreat to the side of the drain electrode DE. This makes it possible toreduce the threshold value Vth of the channel portion at the end portionof the trench T on the side of the drain electrode DE and thereby reducethe on resistance. Further, this makes it possible to suppressgeneration of channel narrowing at the channel portion at the endportion of the trench T on the side of the drain electrode DE andthereby reduce the on resistance. Further, during operation of thesemiconductor device, an electric field concentrated site is dividedinto two sites, that is, the end portion (point P1) of the insulatingfilm IF1 on the side of the trench T and the end portion (point P2) ofthe field plate electrode FP of the gate electrode GE on the side of thedrain electrode DE, leading to relaxation of the electric fieldconcentration and improvement in gate breakdown voltage (refer to FIGS.21 and 18).

In the above step, the may insulating film IFM is used for causing theend portion of the insulating film IF1 on the side of the trench T toretreat to the side of the drain electrode DE, but the retreat amountsLd and Ls may be secured by adjusting an etch selectivity of theinsulating film IF1 to the barrier layer BA and the channel layer CH andmaking use of a film loss (retreat) from the end portion of theinsulating film IF1 on the side of the trench T during formation of thetrench T. FIGS. 31 and 32 are cross-sectional views showing the othermanufacturing steps of the semiconductor device of the presentembodiment.

As shown in FIG. 31, an insulating film IF1 is formed as a cover film onthe barrier layer BA. Next, an opening portion is formed in an openingregion OA1 of the insulating film IF1 by using photolithography andetching. Next, with this insulating film IF1 as a mask, the barrierlayer BA and the channel layer CH are etched. By regulating the etchingconditions, a film loss of the insulating film IF1 is used and apredetermined thickness of the insulating film IF1 is etched from thesurface of the insulating film IF1 and also from the sidewall of thetrench T. This makes it possible to cause the insulating film IF1 toretreat from the sidewall of the trench T. In this case, for example,the retreat amounts Ld and Ls can be controlled within a range of from 5nm to 0.1 μm.

In order to secure large retreat amounts Ld and Ls with goodcontrollability, for example, to secure retreat amounts (Ld and Ls)equal to or greater than the thickness of the insulating film IF2 orequal to or greater than 0.2 μm, the above-mentioned step using themasking insulating film FM is preferred.

The above-mentioned steps are only exemplary and the semiconductordevice of the present embodiment may be manufactured using steps otherthan the above-mentioned ones.

(Evaluation Results)

Evaluation results of various characteristics (on resistance, S value,and electric field intensity) of the semiconductor device (FIG. 21) ofthe present embodiment will hereinafter be described. The retreatamounts Ld and Ls were set at Ld≈Ls. The gate length (width of theopening region OA2), the length of the field plate electrode, and thedistance between the gate electrode GE and the drain electrode DE wereset at 1 μm, 2 μm, and 10 μm, respectively.

FIG. 33 is a graph showing the relationship of the semiconductor devicebetween the on resistance and the retreat amount. The on resistance Ron[Ω mm] is plotted along the ordinate, while the retreat amount Ld [μm]is plotted along the abscissa. The on resistance Ron is a sum(Ron=Rch+Ras+Rad) of a channel resistance Rch generated along the bottomsurface of the trench T, a channel resistance Ras generated along theside surface of the trench T on the side of the source electrode SE, anda channel resistance Rad generated along the side surface of the trenchT on the side of the drain electrode DE. As biasing conditions, thedrain voltage Vd and the gate voltage Vg were set at 0.1V and 10V,respectively. Further, the thickness of alumina as the insulating filmIF2, the remaining thickness of the insulating film IF1, the depth ofthe trench T, and the taper angle were set at 100 nm, 60 nm, 40 nm, andabout 90°, respectively.

In the semiconductor device under the above-mentioned conditions, the onresistance Ron decreases with an increase in the retreat amount Ld asshown in FIG. 33. For example, a decrease in the on resistance Ron isobserved even at the retreat amount Ld of about 0.02 μm. It has beenrevealed that at the retreat amount Ld of about 0.1 μm, the onresistance Ron shows a sufficient decrease; and at the retreat amount Ldof 0.2 μm or greater, the on resistance Ron becomes almost constant,which is almost the same level as that when the whole insulating filmIF1 is removed (Ld: to ∞).

Next, the relationship, between the on resistance Ron and the taperangle θ [°], of each of a semiconductor device set at a retreat amountLd of 0 (no retreat) and a semiconductor device set at a retreat amountLd of 0.2 μm was studied. FIG. 34 is a graph showing the relationship ofeach of the semiconductor devices between the on resistance and thetaper angle. The on resistance Ron is plotted along the ordinate, whilethe taper angle θ [°] is plotted along the abscissa.

When the retreat amount Ld is 0 (no retreat), the on resistanceincreases with an increase in taper angle θ. It has been revealed thateven when the retreat amount LD is 0.2 μm, the on resistance Ronincreases with an increase in taper angle θ, but an increase rate issmaller than that of the above case. It has also been revealed that whenthe insulating film IF1 is caused to retreat from the end portion on theside of the trench T at a taper angle within a range of from 50 to 90°,the on resistance Ron can be decreased compared with the case where theinsulating film is not caused to retreat. In particular, it has beenrevealed that even when the taper angle θ is adjusted to from 70 to 80°under ordinary etching conditions, the on resistance Ron can be madesmaller when the insulating film IF1 is caused to retreat from the endportion on the side of the trench T than when the insulating film is notcaused to retreat and the on resistance can be decreased to from about40 to 30% of the on resistance when the insulating film is not caused toretreat.

As described above, when alumina is used as the insulating film (gateinsulating film) IF2, it is highly effective for compensating for thenegative polarization charge (e) of the surface of the AlGaN layer whichis the barrier layer BA so that the negative polarization charge (e) atthe interface between alumina and AlGaN can be reduced. As a result,channel narrowing in the channel portion at the end portion of thetrench T on the side of the drain electrode DE can be suppressed.

Thus, by causing the insulating film IF1 to retreat from the end portionon the side of the trench T, two effects can be achieved. Effect 1 canshorten the distance between the field plate electrode FP of the gateelectrode GE and the barrier layer BA (semiconductor region, nitridesemiconductor region) and thereby reduce the on resistance. Effect 2 ofcompensating for the negative polarization charge (e) is produced byalumina. The effect of suppressing the on resistance shown in FIG. 34can therefore be confirmed.

Next, with regard to semiconductor devices having a retreat amount Ldset at 0 (no retreat) and a retreat amount Ld set at 0.2 μm,respectively, the relationship between S value and taper angle θ [°] wasstudied. FIG. 35 is a graph showing the relationship of thesemiconductor device between S value and taper angle. The S value[mV/dec.] is plotted along the ordinate, while the taper angle θ [°] isplotted along the abscissa. The S value [mV/dec.] is a value(subthreshold swing) showing sharpness of transition from on-state tooff-state. This S value is preferably smaller in an ordinaryapplication. The S value was defined at a drain current Id of from1×10⁻⁵ (1E-5) to 1×10⁻⁶ (1E-6) [A/mm] as a result of sweeping a gatevoltage Vg while applying a drain voltage Vd of 0.1V.

When the retreat amount Ld is 0 (no retreat), the S value increases withan increase in the taper angle θ. When the retreat amount Ld is 0.2 μm,even an increase in the taper angle θ causes no substantial change in Svalue. It has therefore been revealed that there is almost no dependenceof the S value on the taper angle θ.

It has therefore be revealed that using the configuration of thesemiconductor device in which the insulating film IF1 is caused toretreat from the end portion on the side of the trench T leads to adrastic reduction in on resistance and further, a drastic improvement inS value, which is presumed to occur due to the above-mentioned Effect 1and Effect 2.

Next, with regard to semiconductor devices having, among theabove-mentioned conditions, a retreat amount Ld of 0 (no retreat),having a retreat amount Ld of 0.2 μm, and having no field plateelectrode FP, respectively, the electric field intensity distribution ina region (site) extending with the same depth from the end portion ofthe bottom surface of the trench T on the side of the source electrodeSE to the direction of the drain electrode DE was studied. FIG. 36 is agraph showing an electric field intensity distribution of thesemiconductor devices having a retreat amount Ld of 0, having a retreatamount Ld of 0.2 μm, and having no field plate electrode FP,respectively.

The electric field intensity [V/cm] is plotted along the ordinate, whilethe distance [μm], in a lateral direction, of a region (site) extendingwith the same depth from the end portion of the bottom surface of thetrench T on the side of the source electrode SE in the direction of thedrain electrode DE is plotted along the abscissa. The electric fieldintensity was in an off-state (gate voltage Vg=0V) at a drain voltage Vdof 100V and it was determined using two-dimensional device simulation.In addition, the gate length (width of the opening region OA2) was setat 2 μm, the length of the field plate electrode at 3 μm, and thedistance between the gate electrode GE and the drain electrode DE at 10μm. Further, the film thickness of alumina as the insulating film IF2was set at 100 nm, the remaining thickness of the insulating film IF1 at60 nm, the depth of the trench T at 40 nm, and the angle (taper angle θ)between the sidewall of the trench T and the extension of the bottomsurface of the trench T at about 90°.

FIG. 36 shows electric field intensity distribution of each of threesemiconductor devices, that is, (1) a semiconductor device (basicstructure, reference) having no field plate electrode FP; (2) asemiconductor device having a retreat amount Ld of 0, more specifically,a semiconductor device (semiconductor device with a one-stage FPstructure) of Comparative Example as shown in FIG. 17; and (3) asemiconductor device having a retreat amount Ld of 1 μm, morespecifically, a semiconductor device (semiconductor device with atwo-stage FP structure). FIG. 37 is a cross-sectional view schematicallyshowing the configuration of the semiconductor device (1) having nofield plate electrode FP. In the semiconductor device shown in FIG. 37,the end portion of the insulating film IF1 on the side of the trench Tis not caused to retreat to the side of the drain electrode DE andfurther, no field plate electrode FP is provided which extends from theend portion of the trench T on the side of the drain electrode DE to theside of the drain electrode DE.

As is apparent from FIG. 36, the semiconductor device (basic structure,reference) (1) having no field plate electrode FP shows a highconcentration of electric field on the end portion of the gate electrodeGE on the side of the drain electrode DE. This semiconductor device istherefore easily broken at the end portion.

The electric field concentration of the semiconductor device (2) havinga retreat amount Ld of 0 (one-stage FP structure) at the end portion ofthe gate electrode GE on the side of the drain electrode DE is greatlyrelaxed compared with the semiconductor device of (1). A relatively highelectric field concentration is however observed at the end portion ofthe field plate electrode FP on the side of the drain electrode DE. Thissemiconductor device is therefore easily broken at the end portion ofthe field plate electrode FP on the side of the drain electrode DE. Alsoin evaluation of breakdown voltage of an actual semiconductor device,deterioration in breakdown voltage is observed at the end portion of thefield plate electrode FP on the side of the drain electrode DE.

In the semiconductor device (3) having a retreat amount Ld of 1 μm, onthe other hand, the electric field concentration is dispersed into twosites, that is, the end portion (above-mentioned point P1) of theinsulating film IF1 on the side of the trench T and the end portion (theabove-mentioned point P2) of the field plate electrode FP of the gateelectrode GE on the side of the drain electrode DE (refer to FIG. 18).The electric field concentration at the end portion of the field plateelectrode FP on the side of the drain electrode DE is greatly relaxedcompared with that of the semiconductor device (2). Also the electricfield concentration at the end portion of the gate electrode GE on theside of the drain electrode DE is relaxed compared with thesemiconductor device (2). When a drain voltage Vd of 100V is applied,the maximum electric field intensity can be suppressed even to a levelof about 8.0E+05 (8×10⁵) [V/cm]. These results show that in a regionfrom the end portion of the bottom surface of the trench T on the sideof the source electrode SE to the end portion of the field plateelectrode FP on the side of the drain electrode DE, overall relaxationof electric field concentration can be observed. Due to this relaxation,the semiconductor device thus obtained has an improved off-statebreakdown voltage characteristic.

According to the semiconductor device (semiconductor device having atwo-stage FP structure) of the present embodiment, as described above,electric field concentration below the field plate electrode FP isrelaxed and gate breakdown voltage is improved. Moreover, the length ofthe field plate electrode FP can be shortened and therefore the distancebetween the gate electrode GE and the drain electrode DE can beshortened. This makes it possible to provide a downsized and highlyintegrated device.

In First Embodiment and Second Embodiment, described in detail was areduction of on resistance by suppressing the channel C at the endportion of the trench T on the side of the drain electrode DE fromhaving an effectively high threshold value Vth. It is also possible toimprove the threshold value Vth, for example, set it at Vth≥2V andthereby stabilize the normally-off characteristic. For example, thethreshold value Vth may be improved and the normally-off characteristicis stabilized more by using an AlGaN layer as the buffer layer BU andmaking use of a negative polarization charge at the interface(GaN/AlGaN) between the channel layer CH (GaN layer) and the bufferlayer BU (AlGaN layer) to lift up the electric potential at the lowerend of a conduction band.

Third Embodiment

In the present embodiment, a description will be made on an example ofimproving a threshold value Vth and stabilizing a normally-offcharacteristic further by forming an impurity-containing semiconductorregion in a channel portion. FIG. 38 is a cross-sectional viewschematically showing the configuration of a semiconductor device of thepresent embodiment.

[Description on Structure]

In the semiconductor device of the present embodiment, as shown in FIG.38, the trench T has, at the bottom surface thereof, that is, in aregion where a channel is to be formed, a semiconductor region DScontaining an impurity. The other configuration is similar to that ofSecond Embodiment (FIG. 21) so that a detailed description on it isomitted. Described specifically, in the semiconductor device of thepresent embodiment, the end portion of the insulating film IF1 on theside of the trench T on the side of the drain electrode DE is caused toretreat by a retreat amount Ld to the side of the drain electrode DE andfurther, the end portion of the insulating film IF1 on the side of thetrench T on the side of the source electrode SE is caused to retreat bya retreat amount Ls to the side of the source electrode SE. In addition,the angle between the side surface (sidewall) of the trench T and theextension of the bottom surface of the trench T is less than 90°.

[Description on Manufacturing Method]

Next, referring to FIGS. 39 to 45, a method of manufacturing thesemiconductor device of the present embodiment will be described and atthe same time, the configuration of the semiconductor device will beshown more clearly. FIGS. 39 to 45 are cross-sectional views showing themanufacturing steps of the semiconductor device of the presentembodiment. A detailed description on steps similar to those of FirstEmbodiment or Second Embodiment will be omitted.

First, similar to First Embodiment, a stacked body of a nucleus forminglayer NUC, a strain relaxing layer STR, a buffer layer BU, a channellayer CH, and a barrier layer BA is formed on a substrate S (refer toFIG. 2).

Next, as shown in FIG. 39, an insulating film IF1 is formed as a coverfilm on the barrier layer BA. Described specifically, as the insulatingfilm IF1, for example, a silicon nitride film having a thickness ofabout 900 angstrom is deposited by using CVD or the like method. Then,similar to Second Embodiment, an opening portion of the insulating filmIF1 is formed in an opening region OA2. The barrier layer BA and thechannel layer CH in the opening region OA2 are then etched to form atrench T. The angle (taper angle θ) between the sidewall of this trenchT and the extension of the bottom surface of the trench T is less than90°. The insulating film IF1 in the opening region OA1 is then etched tocause the end portion of the insulating film IF1 to retreat. The openingregion OA2 is located at a substantially center portion of the openingregion OA1.

Next, as shown in FIG. 40, a photoresist film PR3 having an openingportion in an opening region OA3 is formed using photolithography. Theopening region OA3 is located at a substantially center portion of theopening region OA2.

Next, as shown in FIG. 41, with the photoresist film PR3 as a mask, animpurity ion is implanted into the channel layer CH in the openingregion OA3. As a result, a semiconductor region DS containing animpurity is formed at the bottom surface of the trench T.

Here, ion implantation into the channel layer (GaN layer) CH isperformed using Mg (magnesium) having a concentration of 1E18/cm²(1×10¹⁸ cm²) as an impurity at an implantation energy of from 10 KeV to15 KeV. As a result, a semiconductor region DS containing a p typeimpurity can be formed. Alternatively, F (fluorine) may be introduced asan impurity into a channel layer (epi layer substrate) CH. CF₄ Plasmatreatment is effective for implantation of fluorine (F) as an impurity.When a sample is exposed to CF₄ plasma, fluorine ion (F⁻) is introducedinto the channel layer (epi-layer substrate) CH. More specifically,treatment in a reactive ion etching apparatus with electricity of, forexample, about 135 W for about 200 seconds is recommended. After plasmatreatment, however, heat treatment at 400° C. for about 10 minutes ispreferably conducted in order to recover a surface damage due to CF₄plasma treatment. In this example, the height of the bottom surface ofthe semiconductor region DS is made almost equal to the height of thesurface of the buffer layer BU, but it is only necessary that thesemiconductor region DS is placed in a formation region of a channel.The bottom surface of the semiconductor region DS may be higher than thebottom surface of the channel layer CH or the bottom surface of thesemiconductor region DS may be lower than the surface of the bufferlayer BU. Next, as shown in FIG. 42, the photoresist film PR3 is removedby plasma stripping treatment or the like.

Next, as shown in FIG. 43, a cover film (which may also be called“protective film”) CF is formed on the insulating film IF1 including theinside of the trench T. As the cover film CF, for example, a siliconoxide film is deposited using CVD or the like method. Next, heattreatment (annealing) is performed in order to activate the impurity (Mgin this example). Then, the cover film CF is removed by etching or thelike.

Next, as shown in FIG. 44, an insulating film IF2 and a gate electrodeGE are formed. The insulating film IF2 and the gate electrode GE can beformed in a similar manner to that employed in First Embodiment orSecond Embodiment (refer to FIG. 13).

Next, as shown in FIG. 45, a source electrode SE and a drain electrodeDE are formed. The source electrode SE and the drain electrode DE can beformed in a similar manner to that employed in First Embodiment orSecond Embodiment (refer to FIGS. 14 to 16).

Also in this embodiment, the end portion of the insulating film IF1 onthe side of the trench T is caused to retreat to the side of the drainelectrode DE as in First Embodiment or Second Embodiment so that an onresistance can be reduced. In addition, an electric field concentrationis relaxed and gate breakdown voltage is improved (refer to FIGS. 21 and18).

Moreover, since the semiconductor region DS containing the p typeimpurity or fluorine (fluorine anion) is formed at the bottom surface ofthe trench T, that is, in the channel formation region, the electricpotential at this region is lifted up, making it possible to improve thethreshold value Vth and stabilize the normally-off characteristicfurther.

The above-mentioned step is just one example. The semiconductor deviceof the present embodiment may be manufactured by steps other than theabove-mentioned ones.

Fourth Embodiment

Although no limitation is imposed on an electronic device to which thesemiconductor device (transistor) described above in First to ThirdEmbodiments is applied, it can be applied to, for example, an electronicdevice shown in FIG. 46. FIG. 46 is a circuit diagram showing theconfiguration of an electronic device of the present embodiment.

An electronic device 22 shown in FIG. 46 is an electronic device to beused for vehicles and it is coupled to a power source 24 and a load 26.The power source 24 is, for example, an in-car battery. The load 26 is,for example, an in-car electronic part, for example, a motor which willbe a power source of a head lamp or power window or a power source of avehicle. This electronic device 22 controls electricity to be suppliedfrom the power source 24 to the load 26.

The electronic device 22 has a semiconductor device having a transistor210, a semiconductor device 220, and a control circuit 230 mounted on acircuit board (for example, printed circuit board). The semiconductordevice 220 has a microcomputer and is coupled to the transistor 210 viaa wiring of the circuit board. The semiconductor device 220 controls thetransistor 210 via the control circuit 230.

Described specifically, the semiconductor device 220 inputs a controlsignal to the control circuit 230. The control circuit 230 then inputs asingle to the gate electrode of the transistor 210 according to thecontrol signal input from the semiconductor device 220. In such amanner, the semiconductor device 220 controls the transistor 210 via thecontrol circuit 230. This transistor 210 is controlled, wherebyelectricity from the power source 24 is supplied to the load 26 asneeded.

For example, the semiconductor device (transistor) described above inFirst to Third Embodiments can be applied to the transistor 210 of thiselectronic device 22.

The invention made by the present inventors has been describedspecifically based on some embodiments. The invention is not limited tothe above-mentioned embodiments and needless to say, it can be changedin various ways without departing from the scope of the invention. Forexample, the semiconductor region DS of Third Embodiment may be appliedto the semiconductor device of First Embodiment (FIG. 1).

What is claimed is:
 1. A semiconductor device, comprising: a firstnitride semiconductor layer formed over a substrate; a second nitridesemiconductor layer formed over the first nitride semiconductor layerand having a band gap wider than a band gap of the first nitridesemiconductor layer; a trench penetrating through the second nitridesemiconductor layer and reaching an inside of the first nitridesemiconductor layer; a gate electrode placed in the trench over a gateinsulating film; and a first electrode and a second electrode formedover the second nitride semiconductor layer on both sides of the gateelectrode, respectively, wherein the gate insulating film includes afirst film placed over the second nitride semiconductor layer on bothsides of the trench and including an opening region including aformation region of the trench, and a second film formed over a portionof the first film including the opening region such that an uppersurface of another portion of the first film is exposed outside thesecond film, wherein the first film is retreated from an end portion ofthe trench on a side of the first electrode, and wherein a distance fromthe end portion of the trench to the first film is 0.2 μm or greater. 2.The semiconductor device according to claim 1, wherein the first film isfurther retreated from another end portion of the trench on a side ofthe second electrode.
 3. The semiconductor device according to claim 1,wherein the first film comprises a film containing silicon nitride, andwherein the second film comprises a film containing aluminum oxide. 4.The semiconductor device according to claim 1, wherein the trenchcomprises a tapered sidewall.